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余瑞璜大讲堂(七十一)

时间:2026-08-15 11:32:48 点击:

讲座题目:Modulation of energy level and spin polarization in novel 2D materials

讲座嘉宾:王业亮 北京理工大学集成电子欧洲杯 院长

讲座时间:2026年8月15日 15:30

讲座地点:吉林大学中心校区唐敖庆楼B区521报告厅

主持人:李全

嘉宾简介

  Dr.Yeliang Wang is a full professor and the Dean in School of Integrated Circuits and Electronics, Beijing Institute of Technology. He received his B.S. and M.S. degree from the Wuhan University of Technology, Ph.D. degree from Institute of Physics(IoP), Chinese Academy of Sciences (CAS). He then joined in the Max-Planck-Institute for Solid Research, Germany as a Humboldt Fellow (hosted by Prof. Klaus Kern). He was appointed an associate professor in 2008 and a full professor in 2013 in the IoP, CAS. He set up a research group in Beijing Institute of Technology (BIT) in 2018. He was awarded as the National Science Fund of China for Distinguished Young Scholars in 2017. His current research interest is the controlled growth, quantum properties and funtional nanodevices of novel two-dimensional materials and heterostructures. He held more than 210 papers published on high-profile journals.

讲座摘要

  The novel properties of graphene honeycomb structure have spurred tremendous interest in investigating other two-dimensional (2D) layered structures beyond graphene for nanodevices. In this talk, I will mention the fabrication and properties of several 2D materials such as magnetic VSe2 monolayer, semiconducting PtSe2 monolayer, superconductor transition-metal-trichalcogenide HfTe3, charge density wave NbSe2 superstructure and related heterostructures and devices, as well as quantum properties for nanoelectronics and valleytronics will also be introduced. In addition, the stacking heterolayers for ultrahigh density information storage, Majorana bound states and quantum computing will be also presented. Complex micro-nano architectures with high spatial resolution and tunable depth profiles are also realized by new lithography technique. The precise structural configurations at atomic-resolution of these materials and device transport properties will also be introduced.

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欧洲杯

物质模拟方法与软件教育部重点实验室